Title:
METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE AND SEMICONDUCTOR WAFER USING SAID SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2014/123097
Kind Code:
A1
Abstract:
A composite substrate (1) includes: a support substrate (11) including, as a crystal phase, 35-65% by mass of a mullite phase, and 35-65% by mass of an alumina phase; and a semiconductor film (13) disposed on the main surface (11m) of the support substrate (11). A method for manufacturing a semiconductor wafer (3) includes: a step for preparing the composite substrate (1); a step for growing at least one semiconductor layer (20) on the semiconductor film (13) of the composite substrate to form a composite substrate (2) having a semiconductor layer; and a step for removing the support substrate (11) from the composite substrate (2) having a semiconductor layer to form the semiconductor wafer (3). A method is thus provided for manufacturing a composite substrate suitable for manufacturing a high-quality semiconductor wafer with high yield and good efficiency, and a semiconductor wafer using same.
Inventors:
SEKI YUKI (JP)
SATOH ISSEI (JP)
YAMAMOTO YOSHIYUKI (JP)
MATSUBARA HIDEKI (JP)
SOGABE KOICHI (JP)
HASEGAWA MASATO (JP)
TSUJI YUTAKA (JP)
FUJII AKIHITO (JP)
SATOH ISSEI (JP)
YAMAMOTO YOSHIYUKI (JP)
MATSUBARA HIDEKI (JP)
SOGABE KOICHI (JP)
HASEGAWA MASATO (JP)
TSUJI YUTAKA (JP)
FUJII AKIHITO (JP)
Application Number:
PCT/JP2014/052493
Publication Date:
August 14, 2014
Filing Date:
February 04, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/02; C30B25/18; C30B29/38; H01L21/20
Foreign References:
| JP2012121788A | 2012-06-28 | |||
| JP2011007597A | 2011-01-13 | |||
| JPH05152463A | 1993-06-18 | |||
| JP2008297175A | 2008-12-11 | |||
| JP2006143581A | 2006-06-08 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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