METHOD FOR MANUFACTURING CVD-SIC MATERIAL

Title:

METHOD FOR MANUFACTURING CVD-SIC MATERIAL

Document Type and Number:

WIPO Patent Application WO/2016/141579

Kind Code:

A1

Abstract:

A method for manufacturing a CVD-SiC material using a carbon source composed of C2H2 and a silicon source composed of a halogenated silane as a raw material gas and forming polycrystalline SiC by the CVD method.

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Inventors:

GOTO TAKASHI (JP)
ZHANG SONG (CN)
TU RONG (CN)
HAN MINGXU (JP)

Application Number:

PCT/CN2015/074065

Publication Date:

September 15, 2016

Filing Date:

March 12, 2015

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Assignee:

IBIDEN CO LTD (JP)
UNIV WUHAN TECH (CN)
GOTO TAKASHI (JP)

International Classes:

C23C16/32; C23C16/455; C30B28/14

Domestic Patent References:

WO2013115711A2

2013-08-08

Foreign References:

JPH02262324A	1990-10-25
JPH07118854A	1995-05-09
CN1906735A	2007-01-31
US5254370A	1993-10-19

Attorney, Agent or Firm:

BEIJING SANYOU INTELLECTUAL PROPERTY AGENCY LTD. (Block A Corporate Square, No.35 Jinrong Street, Beijing 3, CN)

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