METHOD FOR MANUFACTURING ELECTRICAL WIRE, METHOD FOR MANUFACTURING MOLDED ARTICLE, AND METHOD FOR MANUFACTURING RESIN MATERIAL THAT CONTAINS MODIFIED FLUORORESIN

Title:

METHOD FOR MANUFACTURING ELECTRICAL WIRE, METHOD FOR MANUFACTURING MOLDED ARTICLE, AND METHOD FOR MANUFACTURING RESIN MATERIAL THAT CONTAINS MODIFIED FLUORORESIN

Document Type and Number:

WIPO Patent Application WO/2015/129762

Kind Code:

A1

Abstract:

Provided are a manufacturing method that can be improved using electron beam radiation in the air and at a temperature at which fluororesin is not melted, and a method for manufacturing a resin material that contains a modified fluororesin with which molded articles and electrical wire having excellent wear resistance can be obtained. A method for manufacturing electrical wire characterized by including a step for irradiating an electron beam onto an insulating layer containing a fluororesin for coating the surface of a conductor, and producing an insulated layer that contains a modified fluororesin, the fluororesin having a crystal melting point of 260°C or more, and containing: (a) a structural unit having a carbonyl-group-containing group, and/or (a') a main-chain terminal group having a carbonyl-group-containing group; and a structural unit (b) based on a perfluoromonomer; and not containing a structural unit (excluding structural unit (a)) based on a hydrocarbon monomer, the radiation with the electron beam being performed in the air and at a temperature that is less than the crystal melting point of the fluororesin, and at least one of the following conditions (1) to (3) being satisfied. (1) 0.5 ≤ Mb/Ma < 1.2 [In the equation, Ma represents the melt flow rate (g/10 minutes) of the fluororesin before irradiation with the electron beam, and Mb represents the melt flow rate (g/10 minutes) of the fluororesin after irradiation with the electron beam.] (2) 1 ≤ Tb – Ta < 6.5 [In the equation, Ta represents the crystal melting point (°C) of the fluororesin before irradiation with the electron beam, and Tb represents the crystal melting point (°C) of the fluororesin after irradiation with the electron beam.] (3) Irradiation dose less than 30 kGy

Inventors:

ABE MASATOSHI (JP)
HOSODA TOMOYA (JP)

Application Number:

PCT/JP2015/055447

Publication Date:

September 03, 2015

Filing Date:

February 25, 2015

Export Citation:

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Assignee:

ASAHI GLASS CO LTD (JP)

International Classes:

H01B13/00; C08F214/26; C08J3/28

Foreign References:

JPH09278907A	1997-10-28
JPH07292199A	1995-11-07

Other References: