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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/146920
Kind Code:
A1
Abstract:
A method for manufacturing an electronic device according to the present invention comprises the steps of: preparing a substrate; forming an n-type semiconductor comprising a group III-V compound semiconductor or a group II-VI compound semiconductor material on the substrate; forming a metal thin film comprising at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the top portion of the n-type semiconductor; and forming a p-type semiconductor on the top portion of the n-type semiconductor by performing iodination of a metal thin film using any one of liquid iodine (I), solid iodine (I), or gaseous iodine (I). Therefore, it is possible to overcome the luminous efficiency limit of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method therefor.

Inventors:
KO SEOK NAM (KR)
AHN DO YEOL (KR)
YANG SEUNG HYUN (KR)
Application Number:
PCT/KR2018/016744
Publication Date:
August 01, 2019
Filing Date:
December 27, 2018
Export Citation:
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Assignee:
PETALUX INC (KR)
International Classes:
H01L33/00
Domestic Patent References:
WO2009106583A12009-09-03
Foreign References:
KR20170140563A2017-12-21
KR101548901B12015-09-01
KR20140003124A2014-01-09
KR20120057646A2012-06-05
Attorney, Agent or Firm:
C.M. PATENT & LAW FIRM, LLP. (KR)
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