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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2016/170721
Kind Code:
A1
Abstract:
Provided is a method for manufacturing epitaxial wafers characterized by comprising: a step of performing primary polishing of polishing both sides of a silicon wafer while feeding a slurry containing first abrasive grains using a double side polishing device which includes top and bottom platens to which polishing cloths are attached and a carrier that holds the silicon wafer between the top and bottom platens; a step of performing secondary polishing of polishing both sides of the silicon wafer after the primary polishing while feeding a slurry containing second abrasive grains having a smaller average particle size than the first abrasive grains, using the double side polishing device; and a step of growing an epitaxial layer without performing one side chemical mechanical polishing on the silicon wafer surface after the secondary polishing. Consequently, a method for manufacturing epitaxial wafers is provided which allows flat epitaxial wafers with less defects to be stably manufactured.

Inventors:
TANAKA YUKI (JP)
KITAZUME DAICHI (JP)
SUDA KAZUNARI (JP)
KOBAYASHI SYUICHI (JP)
Application Number:
PCT/JP2016/001183
Publication Date:
October 27, 2016
Filing Date:
March 04, 2016
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B29/06; C30B25/20; H01L21/20; H01L21/205; H01L21/304; H01L21/306
Foreign References:
JP2012109310A2012-06-07
JP2010040643A2010-02-18
JP2013025844A2013-02-04
JP2004195571A2004-07-15
Attorney, Agent or Firm:
YOSHIMIYA, Mikio et al. (JP)
Good Miya Mikio (JP)
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