Title:
METHOD FOR MANUFACTURING EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2018/147528
Kind Code:
A1
Abstract:
An embodiment comprises the steps of: acquiring an ESFQD of a base substrate; calculating an ESFQD average of the base substrate on the basis of the acquired ESFQD; classifying the shape of the base substrate on the basis of the calculated ESFQD average; and setting a delta ESFQD average for an epitaxial layer to be grown on the classified base substrate in correspondence with the shape of the classified base substrate, wherein the delta ESFQD average is obtained by subtracting the acquired ESFQD average of the base substrate from the ESFQD average of the epitaxial substrate to be grown.
Inventors:
KIM JAE SUN (KR)
Application Number:
PCT/KR2017/012643
Publication Date:
August 16, 2018
Filing Date:
November 09, 2017
Export Citation:
Assignee:
SK SILTRON CO LTD (KR)
International Classes:
H01L21/20; H01L21/02; H01L21/66; H01L21/673
Foreign References:
| JP2011009246A | 2011-01-13 | |||
| KR20070033887A | 2007-03-27 | |||
| KR20100121837A | 2010-11-19 | |||
| JP2010258169A | 2010-11-11 | |||
| JP2007142326A | 2007-06-07 |
Attorney, Agent or Firm:
LEE, Seung Chan (KR)
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