Title:
METHOD FOR MANUFACTURING FAST SOFT RECOVERY DIODE CHIP
Document Type and Number:
WIPO Patent Application WO/2019/090880
Kind Code:
A1
Abstract:
A method for manufacturing a fast soft recovery diode chip. The manufacturing method involves forming a doping peak region by means of epitaxial growth or forming a platinum-enriched center of a diode by means of the technique of etching a damaged hole, thus forming a local minority carrier lifetime control region (4), without needing to use an expensive device to perform high-energy irradiation, such that the costs are reduced greatly, and the process is simpler and the parameters are more consistent.
More Like This:
Inventors:
WANG CHENGSEN (CN)
SHEN ZHENG JOHN (CN)
ZHANG CHAO (CN)
WANG JUN (CN)
QIAN QINGYOU (CN)
SHEN ZHENG JOHN (CN)
ZHANG CHAO (CN)
WANG JUN (CN)
QIAN QINGYOU (CN)
Application Number:
PCT/CN2017/115128
Publication Date:
May 16, 2019
Filing Date:
December 08, 2017
Export Citation:
Assignee:
JIANGSU JIEJIE MICROELECTRONICS CO LTD (CN)
International Classes:
H01L21/329
Foreign References:
| CN102820225A | 2012-12-12 | |||
| CN102832121A | 2012-12-19 | |||
| CN103578978A | 2014-02-12 | |||
| US7091572B2 | 2006-08-15 | |||
| CN1710707A | 2005-12-21 | |||
| CN205428950U | 2016-08-03 |
Attorney, Agent or Firm:
NANJING ZHENGLIAN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
Download PDF: