Title:
METHOD FOR MANUFACTURING FBAR RESONATOR
Document Type and Number:
WIPO Patent Application WO/2022/063149
Kind Code:
A1
Abstract:
A method for manufacturing an FBAR resonator, comprising: forming a lower electrode on a substrate; forming a dielectric layer or a piezoelectric layer on the lower electrode and the substrate, said layer having a first thickness; planarizing the dielectric layer or the piezoelectric layer to reduce the first thickness to a second thickness; etching the dielectric layer or the piezoelectric layer until the lower electrode is exposed; forming a piezoelectric layer or another piezoelectric layer on the lower electrode and the substrate; and forming an upper electrode on the piezoelectric layer or the other piezoelectric layer. According to the method for manufacturing a resonator in the present invention, a plane having a flat surface is formed step-by-step by sequentially employing the processes of deposition, planarization, and etching, thereby reducing defects and avoiding acoustic energy leakage.
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Inventors:
TANG ZHAOYUN (CN)
WANG JIAYOU (CN)
TANG BIN (CN)
LAI ZHIGUO (CN)
YANG QINGHUA (CN)
WANG JIAYOU (CN)
TANG BIN (CN)
LAI ZHIGUO (CN)
YANG QINGHUA (CN)
Application Number:
PCT/CN2021/119758
Publication Date:
March 31, 2022
Filing Date:
September 23, 2021
Export Citation:
Assignee:
SUZHOU HUNTERSUN ELECTRONICS CO LTD (CN)
International Classes:
H03H9/17; H01L41/332; H03H3/02; H03H9/02
Foreign References:
| US20130106534A1 | 2013-05-02 | |||
| US20100107389A1 | 2010-05-06 | |||
| US20150280679A1 | 2015-10-01 | |||
| CN112071975A | 2020-12-11 | |||
| CN112087217A | 2020-12-15 | |||
| US20050006984A1 | 2005-01-13 |
Attorney, Agent or Firm:
FAIRSKY LAW OFFICE (CN)
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