Title:
METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/051860
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a field effect transistor, the method including a step for forming a gate electrode on the obverse surface of a substrate, a step for forming a gate insulation layer on the gate electrode, a step for forming an electroconductive film that contains a conductor and a photosensitive organic component on the gate insulation layer by a coating method, a step for exposing the electroconductive film from the reverse-surface side of the substrate using the gate electrode as a mask, a step for developing the exposed electroconductive film and forming a source electrode and a drain electrode, and a step for forming a semiconductor layer between the source electrode and the drain electrode by a coating method. This makes it possible to provide an FET, a semiconductor device, and an RFID which can be produced using a simple process, which have high mobility, and in which the gate electrode and the source/drain electrodes are positioned with a high degree of accuracy.
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Inventors:
SHIMIZU HIROJI (JP)
MURASE SEIICHIRO (JP)
KAWAI SHOTA (JP)
MURASE SEIICHIRO (JP)
KAWAI SHOTA (JP)
Application Number:
PCT/JP2017/032066
Publication Date:
March 22, 2018
Filing Date:
September 06, 2017
Export Citation:
Assignee:
TORAY INDUSTRIES (JP)
International Classes:
H01L21/336; H01L29/786; H01L51/05; H01L51/30
Domestic Patent References:
| WO2012018082A1 | 2012-02-09 | |||
| WO2009116373A1 | 2009-09-24 |
Foreign References:
| JP2007129007A | 2007-05-24 | |||
| JP2009283862A | 2009-12-03 | |||
| JP2006265534A | 2006-10-05 | |||
| JP2014048619A | 2014-03-17 | |||
| JP2011119529A | 2011-06-16 | |||
| JP2010532559A | 2010-10-07 |
Other References:
See also references of EP 3514822A4
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