Title:
METHOD FOR MANUFACTURING FILM BULK ACOUSTIC RESONATOR, AND FILTER
Document Type and Number:
WIPO Patent Application WO/2022/057765
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing a film bulk acoustic resonator and a filter. The method comprises: forming a first substrate having a first sacrificial layer; sequentially forming a first electrode, a piezoelectric layer and a second electrode, the first electrode covering the first sacrificial layer; forming, on at least one of the first electrode and the second electrode, an annular trench extending through the corresponding electrode; forming, on the corresponding electrode on which the annular trench is formed, an electrode lead-out structure having an arch bridge structure, the arch bridge structure being opposite to the annular trench; and removing the first sacrificial layer to form a first cavity. According to the present invention, the boundary of an effective resonance region is defined by a region in which an annular gap of an electrode lead-out structure is located, and arrangement of an annular trench enables an end portion of a corresponding electrode at the boundary of the effective resonance region to be in contact with a gas in the gap, thereby achieving the effect of eliminating clutter at the boundary of the effective resonance region for the electrode, and accordingly increasing the Q value of a resonator.
Inventors:
HUANG HERB HE (CN)
Application Number:
PCT/CN2021/117992
Publication Date:
March 24, 2022
Filing Date:
September 13, 2021
Export Citation:
Assignee:
NINGBO SEMICONDUCTOR INT CORPORATION SHANGHAI BRANCH (CN)
International Classes:
H03H9/02; H03H3/02; H03H9/64
Foreign References:
| CN105680813A | 2016-06-15 | |||
| CN1805276A | 2006-07-19 | |||
| CN209994354U | 2020-01-24 | |||
| CN109672419A | 2019-04-23 |
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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