Title:
METHOD FOR MANUFACTURING GAAS WAFER, AND GAAS WAFER GROUP
Document Type and Number:
WIPO Patent Application WO/2022/196786
Kind Code:
A1
Abstract:
Provided are a method for manufacturing a GaAs wafer having excellent OF orientation stability even for a GaAs wafer having an off angle, and a GaAs wafer group. A method for manufacturing a GaAs wafer, including: a polishing step for performing polishing including forming a temporary orientation flat in the circumferential surface of a GaAs ingot; a slicing step for performing slicing of the GaAs ingot that has undergone the polishing step and cutting off a raw-material wafer having an off angle; and a cleavage step for scribing the raw-material wafer in accordance with the direction of the orientation flat determined on the basis of the temporary orientation flat, and cleaving the raw-material wafer to the circumferential surface thereof, starting at the scribing, to form an orientation flat, the cleavage step comprising performing cleavage to a position at which the length (interval A) of a line segment extending perpendicularly to the circumferential surface of the raw-material wafer from the midpoint of the cleavage toward the radial outside of the raw-material wafer is 9 mm or greater.
Inventors:
SUGIURA JUNJI (JP)
Application Number:
PCT/JP2022/012469
Publication Date:
September 22, 2022
Filing Date:
March 17, 2022
Export Citation:
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
International Classes:
B24B1/00; H01L21/304
Domestic Patent References:
| WO2016098662A1 | 2016-06-23 | |||
| WO2020144212A1 | 2020-07-16 |
Foreign References:
| JP2004250248A | 2004-09-09 | |||
| JP2005032804A | 2005-02-03 | |||
| JP2001196333A | 2001-07-19 | |||
| JPH09278595A | 1997-10-28 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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