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Title:
METHOD FOR MANUFACTURING GALLIUM NITRIDE MICROCRYSTALLINE AGGREGATE, AND DEVICE FOR MANUFACTURING GALLIUM NITRIDE MICROCRYSTALLINE AGGREGATE
Document Type and Number:
WIPO Patent Application WO/2019/031501
Kind Code:
A1
Abstract:
A method for manufacturing a gallium nitride microcrystalline aggregate includes a gallium nitride microcrystal manufacturing step in which: an alkali metal and a nitrogen-containing gas are supplied into a raw-material melt, which contains gallium and a surface tension adjuster that adjusts the surface tension of the melt of gallium; and the gallium and the nitrogen-containing gas are reacted to manufacture gallium nitride microcrystals.

Inventors:
NEISHI, Koji (650 Mitsuzawa, Hosaka-cho, Nirasaki-sh, Yamanashi 92, 〒4070192, JP)
MIURA, Hitoshi (650 Mitsuzawa, Hosaka-cho, Nirasaki-sh, Yamanashi 92, 〒4070192, JP)
MORI, Yusuke (1-1 Yamadaoka, Suita-sh, Osaka 71, 〒5650871, JP)
IMADE, Mamoru (1-1 Yamadaoka, Suita-sh, Osaka 71, 〒5650871, JP)
YOSHIMURA, Masashi (1-1 Yamadaoka, Suita-sh, Osaka 71, 〒5650871, JP)
IMANISHI, Masayuki (1-1 Yamadaoka, Suita-sh, Osaka 71, 〒5650871, JP)
Application Number:
JP2018/029599
Publication Date:
February 14, 2019
Filing Date:
August 07, 2018
Export Citation:
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Assignee:
TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-ku Tokyo, 25, 〒1076325, JP)
OSAKA UNIVERSITY (1-1 Yamadaoka, Suita-shi Osaka, 71, 〒5650871, JP)
International Classes:
C01B21/06; C30B29/38
Domestic Patent References:
WO2005064661A12005-07-14
WO2018042705A12018-03-08
Foreign References:
JP2005247657A2005-09-15
JP2004307322A2004-11-04
JP2006062947A2006-03-09
JP2009114035A2009-05-28
Other References:
AOKI, M. ET AL.: "GaN single crystal growth using high-purity Na as a flux", JOURNAL OF CRYSTAL GROWTH, vol. 242, 2002, pages 70 - 76, XP004366244, DOI: doi:10.1016/S0022-0248(02)01349-0
IMABAYASHI, H. ET AL.: "Effect of Al additives on growth of GaN polycrystals by the Na flux method", OPTICAL MATERIALS, vol. 65, 2017, pages 42 - 45, XP029952265, DOI: doi:10.1016/j.optmat.2016.09.030
IMABAYASHI, H. ET AL.: "New development of nuclear generation control technique using a stirring in the Na flux method", JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH, vol. 43, no. 4, 2016, pages 239 - 243, XP055574828
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (Toranomon Mitsui Building, 8-1 Kasumigaseki 3-chome, Chiyoda-k, Tokyo 13, 〒1000013, JP)
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