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Title:
METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2011/155093
Kind Code:
A1
Abstract:
Disclosed is a method of manufacturing a group III nitride semiconductor laser element that is both capable of improving evenness in a resonator mirror and also allows minimizing of threshold current. The orientations of scribe grooves (65a) of a substrate product (SP) are aligned with the direction in which an edge (71b) of a support device (71) extends, and the substrate product (SP) is installed on the support device (71). The substrate product (SP) is divided into first through third regions (70a, 70b, 70c), with reference lines (x-coordinate A1, B1) that extend along the edge (71b) as boundaries therebetween. A severance of the substrate product (SP) is carried out by applying pressure to the third region (70c) of the substrate product (SP) while supporting the first and second regions (70a, 70b) with support faces (71a, 71c), forming another substrate product (SP1) and a laser bar (LB1). A blade (69) is pressed on the substrate product at a location, removed by a distance (SHFT), from a center line (CNT) between edges (71b, 71d) of the support faces (71a, 71c).

Inventors:
TAKAGI SHIMPEI (JP)
YOSHIZUMI YUSUKE (JP)
KATAYAMA KOJI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
Application Number:
PCT/JP2010/073626
Publication Date:
December 15, 2011
Filing Date:
December 27, 2010
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
TAKAGI SHIMPEI (JP)
YOSHIZUMI YUSUKE (JP)
KATAYAMA KOJI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
International Classes:
H01S5/343
Foreign References:
JP2010114418A2010-05-20
JP2000124537A2000-04-28
JP2009144442A2009-07-02
Other References:
See also references of EP 2581997A4
JPN. J. APPL. PHYS., vol. 35, 1996, pages L74 - L76
APPL. PHYS. EXPRESS, vol. 1, 2008, pages 091102
JPN. J. APPL. PHYS., vol. 46, 2007, pages L789
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
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Claims: