Title:
METHOD FOR MANUFACTURING GROUP-III NITRIDE CRYSTAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2013/018534
Kind Code:
A1
Abstract:
A method for manufacturing a group-III nitride crystal substrate of the present invention comprises a first step (S1) for preparing a group-III nitride crystal, and a second step (S2) for manufacturing a group-III nitride crystal substrate by slicing the group-III nitride crystal using a resin-bonded abrasive wire. It is therefore possible to provide a method for manufacturing a group-III nitride crystal substrate with which a group-III nitride crystal substrate that is large in size, small in curvature, and low in surface roughness can be manufactured efficiently and with a high yield by using the resin-bonded abrasive wire.
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Inventors:
MIKAMI HIDENORI (JP)
MATSUMOTO NAOKI (JP)
MATSUMOTO NAOKI (JP)
Application Number:
PCT/JP2012/068067
Publication Date:
February 07, 2013
Filing Date:
July 17, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
MIKAMI HIDENORI (JP)
MATSUMOTO NAOKI (JP)
MIKAMI HIDENORI (JP)
MATSUMOTO NAOKI (JP)
International Classes:
H01L21/304; B24B27/06; B28D5/04; C30B29/38; C30B33/00
Foreign References:
| JP2011009700A | 2011-01-13 | |||
| JP2010272574A | 2010-12-02 | |||
| JP2011082351A | 2011-04-21 | |||
| JP2012004152A | 2012-01-05 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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