Title:
METHOD FOR MANUFACTURING HEXAGONAL SEMICONDUCTOR PLATE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2012/090828
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for effectively manufacturing a hexagonal semiconductor plate crystal with small warpage. This method for manufacturing the hexagonal semiconductor plate crystal is a method for manufacturing a plate crystal by cutting a hexagonal semiconductor crystal with a crystal cutting wire, wherein the crystal cutting wire moves and cuts with respect to the hexagonal semiconductor crystal so as to satisfy both conditions of 25º <α ≤ 90º and β = 90º ± 5º [α is an angle formed by the c-axis of the hexagonal semiconductor crystal and a normal line of a crystal plane cut out by the wire, β is an angle formed by the cutting direction and a reference axis obtained by vertically projecting the c-axis of the hexagonal semiconductor crystal on the crystal plane cut out by the wire].
Inventors:
UCHIDA Hirofumi (())
内田 博文 (())
内田 博文 (())
Application Number:
JP2011/079684
Publication Date:
July 05, 2012
Filing Date:
December 21, 2011
Export Citation:
Assignee:
MITSUBISHI CHEMICAL CORPORATION (14-1, Shiba 4-chome Minato-k, Tokyo 14, 〒1080014, JP)
三菱化学株式会社 (〒14 東京都港区芝四丁目１４番１号 Tokyo, 〒1080014, JP)
UCHIDA Hirofumi (())
三菱化学株式会社 (〒14 東京都港区芝四丁目１４番１号 Tokyo, 〒1080014, JP)
UCHIDA Hirofumi (())
International Classes:
H01L21/304; B24B27/06; B28D5/04
Attorney, Agent or Firm:
HAMADA Yuriko et al. (Eikoh Patent Firm, Toranomon East Bldg. 10F 7-13, Nishi-Shimbashi 1-chome, Minato-k, Tokyo 03, 〒1050003, JP)
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Claims: