Title:
METHOD FOR MANUFACTURING HEXAGONAL SEMICONDUCTOR PLATE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2012/090828
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for effectively manufacturing a hexagonal semiconductor plate crystal with small warpage. This method for manufacturing the hexagonal semiconductor plate crystal is a method for manufacturing a plate crystal by cutting a hexagonal semiconductor crystal with a crystal cutting wire, wherein the crystal cutting wire moves and cuts with respect to the hexagonal semiconductor crystal so as to satisfy both conditions of 25º <α ≤ 90º and β = 90º ± 5º [α is an angle formed by the c-axis of the hexagonal semiconductor crystal and a normal line of a crystal plane cut out by the wire, β is an angle formed by the cutting direction and a reference axis obtained by vertically projecting the c-axis of the hexagonal semiconductor crystal on the crystal plane cut out by the wire].
Inventors:
UCHIDA HIROFUMI
OKANO YUKIO
OKANO YUKIO
Application Number:
PCT/JP2011/079684
Publication Date:
July 05, 2012
Filing Date:
December 21, 2011
Export Citation:
Assignee:
MITSUBISHI CHEM CORP (JP)
UCHIDA HIROFUMI
OKANO YUKIO
UCHIDA HIROFUMI
OKANO YUKIO
International Classes:
H01L21/304; B24B27/06; B28D5/04
Domestic Patent References:
| WO2007029655A1 | 2007-03-15 |
Foreign References:
| JP2007237627A | 2007-09-20 | |||
| JP2002029897A | 2002-01-29 | |||
| JP2008229752A | 2008-10-02 | |||
| JP2009286652A | 2009-12-10 | |||
| JP2009202406A | 2009-09-10 | |||
| JP2004533347A | 2004-11-04 | |||
| JP2011077325A | 2011-04-14 | |||
| JP2009152622A | 2009-07-09 | |||
| JPH1044142A | 1998-02-17 | |||
| JP2005298319A | 2005-10-27 | |||
| JP2002029897A | 2002-01-29 | |||
| JP2006190909A | 2006-07-20 | |||
| JP2008229752A | 2008-10-02 |
Other References:
See also references of EP 2660856A4
Attorney, Agent or Firm:
HAMADA Yuriko et al. (JP)
Yuriko Hamada (JP)
Yuriko Hamada (JP)
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Claims: