Title:
METHOD OF MANUFACTURING III-NITRIDE SEMICONDUCTOR LIGHT EMITTING STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/240202
Kind Code:
A1
Abstract:
The present disclosure generally relates to a method for manufacturing a III-nitride semiconductor light emitting structure and, particularly, to a method for manufacturing a III-nitride semiconductor (a compound of Al(x)Ga(y)In(1-x-y)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1)) light emitting structure capable of shifting the light emission wavelength to a longer wavelength through appropriate barrier layer.
Inventors:
HWANG SUNG MIN (KR)
CHOI HYUNG KYU (KR)
KIM DOO SOO (KR)
HEO SUNG WOON (KR)
MUN SUNG JU (KR)
CHO IN SEONG (KR)
LIM WON TAEG (KR)
CHOI HYUNG KYU (KR)
KIM DOO SOO (KR)
HEO SUNG WOON (KR)
MUN SUNG JU (KR)
CHO IN SEONG (KR)
LIM WON TAEG (KR)
Application Number:
PCT/KR2022/006780
Publication Date:
November 17, 2022
Filing Date:
May 11, 2022
Export Citation:
Assignee:
SOFT EPI INC (KR)
International Classes:
H01L33/00; H01L33/06; H01L33/14; H01L33/32
Foreign References:
| KR20150140938A | 2015-12-17 | |||
| KR20170052738A | 2017-05-15 | |||
| US20180138662A1 | 2018-05-17 | |||
| KR20170134222A | 2017-12-06 | |||
| JP2013102182A | 2013-05-23 |
Attorney, Agent or Firm:
AN, Sang Jeong (KR)
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