Title:
METHOD FOR MANUFACTURING INGOT BLOCK, METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER, AND DEVICE FOR MANUFACTURING INGOT BLOCK
Document Type and Number:
WIPO Patent Application WO/2019/123816
Kind Code:
A1
Abstract:
A method for manufacturing an ingot block for manufacturing an ingot block of single crystal silicon by cutting an ingot of single crystal silicon drawn by the Czochralski method and grinding the outer periphery, wherein the method comprises a step (S2) for measuring the center position of the ingot in the radial direction at one or more locations along the longitudinal direction of the ingot, a step (S7) for establishing a reference position wherein the amount of offset from the measured center position in the radial direction of the ingot is a prescribed amount of eccentricity or less, a step (S8) for cutting the ingot into ingot blocks on the basis of the established reference position, and a step (S9) for grinding the outer periphery of each of the ingot blocks that have been cut.
Inventors:
SAITO YASUHIRO (JP)
Application Number:
PCT/JP2018/039114
Publication Date:
June 27, 2019
Filing Date:
October 22, 2018
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
C30B29/06; B28D5/04; C30B33/00; H01L21/304
Domestic Patent References:
| WO2005076333A1 | 2005-08-18 |
Foreign References:
| JP2004058185A | 2004-02-26 | |||
| JP2011005604A | 2011-01-13 | |||
| JP2017212268A | 2017-11-30 | |||
| JP2002164311A | 2002-06-07 | |||
| JPH07285069A | 1995-10-31 | |||
| JP2003332183A | 2003-11-21 | |||
| JPH06109439A | 1994-04-19 |
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (JP)
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