Title:
METHOD FOR MANUFACTURING INJECTION-ENHANCED INSULATED-GATE BIPOLAR TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2015/010618
Kind Code:
A1
Abstract:
A method for manufacturing an injection-enhanced insulated-gate bipolar transistor, comprising the following steps: an n-type substrate (12) is provided; a p-type doped layer (14) is formed on the n-type substrate (12); a hard layer (20) is formed on the p-type doped layer (14); a groove (40) extending to the n-type substrate (12) is formed by etching on the p-type doped layer (14); an n-type doped layer (50) is formed on the sidewalls and bottom of the groove (40); the hard layer (20) is removed; p-type impurities of the p-type doped layer (14) and n-type impurities of the n-type doped layer (50) are driven in together, where the p-type impurities are diffused to form a p-type base region (60), and the n-type impurities are diffused to form an n-type buffer layer (70); a gated oxide dielectric layer (80) is formed on the surface of the groove (40); and, a polysilicon layer (90) is deposited in the groove having formed therein the gate oxide dielectric layer (80). In the method for manufacturing the injection-enhanced insulated-gate bipolar transistor, the p-type doped layer (14) and the n-type doped layer (50) are driven in together to form the p-type base region (60) and the n-type buffer layer (70), as only one drive-in process is required, production cycle is shortened in comparison with a conventional method for manufacturing the injection-enhanced insulated-gate bipolar transistor.
Inventors:
WANG WANLI (CN)
DENG XIAOSHE (CN)
WANG GENYI (CN)
HUANG XUAN (CN)
DENG XIAOSHE (CN)
WANG GENYI (CN)
HUANG XUAN (CN)
Application Number:
PCT/CN2014/082816
Publication Date:
January 29, 2015
Filing Date:
July 23, 2014
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
International Classes:
H01L21/331; H01L29/73; H01L29/78
Foreign References:
| CN103035720A | 2013-04-10 | |||
| CN102856192A | 2013-01-02 | |||
| CN102487078A | 2012-06-06 | |||
| CN103094324A | 2013-05-08 | |||
| US20090008674A1 | 2009-01-08 | |||
| US20080135972A1 | 2008-06-12 | |||
| KR100299912B1 | 2001-12-17 |
Other References:
See also references of EP 3026695A4
None
None
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
广州华进联合专利商标代理有限公司 (CN)
广州华进联合专利商标代理有限公司 (CN)
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