Title:
METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT, COMPOUND SEMICONDUCTOR WAFER, AND LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2007/114033
Kind Code:
A1
Abstract:
This invention provides a method for manufacturing a light emitting element by
epitaxially growing a luminescent layer part (24) of a first group III-V compound semiconductor
and a current diffusion layer (7) provided in that order on a single crystal substrate
(1) for growth. The method for manufacturing a light emitting element comprises
carrying out a metal organic vapor phase epitaxial growth step and a hydride vapor
phase epitaxial growth step in that order. The metal organic vapor phase epitaxial
growth step comprises epitaxially growing a luminescent layer part (24) on the
single crystal substrate (1) for growth by metal organic vapor phase epitaxial
growth. The hydride vapor phase epitaxial growth step comprises epitaxially
growing the current diffusion layer (7) on the luminescent layer part (24) by
hydride vapor phase epitaxial growth. In the hydride vapor phase epitaxial growth
step, the current diffusion layer (7) is grown as having a low-speed growth layer
(7a) located on a side near the luminescent layer part (24) and a high-speed growth
layer (7b) continued from the low-speed growth layer (7a) in such a manner that
the growth rate of the low-speed growth layer (7a) is lower than the growth rate
of the high-speed growth layer (7b). According to the above constitution, a method
for manufacturing a light emitting element can be provided which can suppress
the occurrence of hillock in the formation of a thick current diffusion layer
by hydride vapor phase epitaxial growth.
Inventors:
KUME, Fumitaka (Isobe Plant, 13-1, Isobe 2-chome, Annaka-sh, Gunma 96, 3790196, JP)
久米 史高 (〒96 群馬県安中市磯部二丁目１３番１号 信越半導体株式会社 磯部工場内 Gunma, 3790196, JP)
久米 史高 (〒96 群馬県安中市磯部二丁目１３番１号 信越半導体株式会社 磯部工場内 Gunma, 3790196, JP)
Application Number:
JP2007/055476
Publication Date:
October 11, 2007
Filing Date:
March 19, 2007
Export Citation:
Assignee:
SHIN-ETSU HANDOTAI CO., LTD. (4-2 Marunouchi 1-chome, Chiyoda-ku Tokyo, 05, 1000005, JP)
信越半導体株式会社 (〒05 東京都千代田区丸の内１丁目４番２号 Tokyo, 1000005, JP)
KUME, Fumitaka (Isobe Plant, 13-1, Isobe 2-chome, Annaka-sh, Gunma 96, 3790196, JP)
信越半導体株式会社 (〒05 東京都千代田区丸の内１丁目４番２号 Tokyo, 1000005, JP)
KUME, Fumitaka (Isobe Plant, 13-1, Isobe 2-chome, Annaka-sh, Gunma 96, 3790196, JP)
International Classes:
H01L33/00; H01L33/14; H01L33/00
Attorney, Agent or Firm:
SUGAWARA, Masatsune (SUGAWARA & ASSOCIATES, Sakae Yamakichi Bldg. 9-30, Sakae 2-chome, Naka-ku, Nagoya-sh, Aichi 08, 4600008, JP)
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