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Title:
METHOD FOR MANUFACTURING LOW-TEMPERATURE POLYSILICON FILM AND TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2019/071694
Kind Code:
A1
Abstract:
A method for manufacturing a low-temperature polysilicon film, comprising: forming a buffer layer on a substrate, the surface of the buffer layer being provided with a plurality of pores; forming a silicon layer on the buffer layer; and annealing the silicon layer to form a polysilicon layer, and filling the pores with part of the silicon material of the polysilicon layer.

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Inventors:
SHAN JIANFENG (CN)
Application Number:
PCT/CN2017/110124
Publication Date:
April 18, 2019
Filing Date:
November 09, 2017
Export Citation:
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Assignee:
HKC CORP LTD (CN)
International Classes:
H01L21/336; H01L29/06
Foreign References:
CN103219228A2013-07-24
CN103887244A2014-06-25
CN107946173A2018-04-20
CN107919268A2018-04-17
CN102891107A2013-01-23
CN1501449A2004-06-02
JP2008004812A2008-01-10
Attorney, Agent or Firm:
CO-HORIZON INTELLECTUAL PROPERTY INC. (CN)
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