Title:
METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT AND INDUCTIVELY COUPLED PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/131215
Kind Code:
A1
Abstract:
The present invention provides a method for manufacturing a magnetic tunnel junction element, in which characteristic degradation caused by hydrogen ions can be suppressed and to which an RIE process ensuring an etching shape is applied. In this method, a multilayer film having a magnetic film and an oxide film is formed, wherein the thickness of the magnetic film is no more than 2 nm, and the magnetic film and the oxide film have an interface in the film surface direction; a patterned mask layer is formed on the multilayer film; and a mixed gas of a hydrogen gas and a nitrogen gas is used as a reaction gas to perform etching on the multilayer film on which the mask layer is formed, wherein the ratio of the flow rate of the hydrogen gas to the flow rate of the mixed gas is 50% or less.
Inventors:
YAMADA MASAKI (JP)
Application Number:
PCT/JP2017/034068
Publication Date:
July 19, 2018
Filing Date:
September 21, 2017
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
C23F4/00; H01L21/302; H01L43/12
Foreign References:
| JP2015018885A | 2015-01-29 | |||
| JP2016046470A | 2016-04-04 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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