METHOD FOR MANUFACTURING MAGNETORESISTANCE ELEMENT AND APPARATUS FOR MANUFACTURING MAGNETORESISTANCE ELEMENT

WIPO Patent Application WO/2007/105472

A1

This invention provides a method for manufacturing a magnetoresistance element having a high MR ratio despite low RA and an apparatus for manufacturing a magnetoresistance element. A magnetoresistance element comprising an MgO (magnesium oxide) layer between a first ferromagnetic layer and a second ferromagnetic layer is produced by forming the MgO layer within a film forming chamber in which a material having a high gettering effect against oxidizing gases such as oxygen and water is applied onto the surface of constituent members, provided within the MgO layer forming chamber, for example, a film forming chamber inner wall (37) within a first film forming chamber (21), an inner wall in a deposition-preventive shield (36), a partition plate (22), and a shutter. The material having a high gettering effect may be a material having an oxygen gas adsorption energy value of not less than 145 kcal/mol. Ta (tantalum) as a material for constituting the magnetoresistance element is particularly preferred.

NAGAMINE YOSHINORI (JP)
TSUNEKAWA KOJI (JP)
JAYAPRAWIRA DAVID (JP)
MAEHARA HIROKI (JP)

PCT/JP2007/053487

September 20, 2007

February 26, 2007

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CANON ANELVA CORP (JP)
NAGAMINE YOSHINORI (JP)
TSUNEKAWA KOJI (JP)
JAYAPRAWIRA DAVID (JP)
MAEHARA HIROKI (JP)

H01L43/12; H01L43/08

JP2004235223A	2004-08-19
JP2005333106A	2005-12-02
JP2004153258A	2004-05-27
JP2001107229A	2001-04-17
JP2004259280A	2004-09-07

APPLIED PHYSICS LETTERS, vol. 86, 2005, pages 092502
See also references of EP 2015377A4

HAGIRI, Masaharu (6-1 Iidabashi 4-chom, Chiyoda-ku Tokyo, JP)

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