Title:
METHOD FOR MANUFACTURING A MOLYBDENUM SPUTTERING TARGET FOR A BACK SURFACE ELECTRODE OF A CIGS SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2012/121542
Kind Code:
A2
Abstract:
The present invention relates to a method for manufacturing a molybdenum sputtering target for a back surface electrode of a CIGS solar cell. The method for manufacturing the molybdenum sputtering target includes: a step of filling molybdenum powder into a mold formed of a graphite material; a step of mounting the mold, in which the molybdenum powder is filled, inside a chamber of a discharge plasma sintering device; a step of forming a vacuum state inside the chamber; a step of increasing the temperature of the molybdenum powder within the mold according to a preset temperature increase pattern in a state where the molybdenum powder is maintained under a predetermined pressure to perform a formation process until the temperature of the molybdenum power reaches a final target temperature; a step of further maintaining the final target temperature for about 1 minute to 10 minutes; and a step of cooling the inside of the chamber while maintaining the predetermined pressure. According to the method for manufacturing the molybdenum sputtering target for a CIGS solar cell, when a sintered body suitable for the sputtering target is manufactured using a discharge plasma sintering process, high density may be achieved. Also, since a single process is performed for a short time, a sintered body having a uniform structure and high purity without causing particle growth may be manufactured.
Inventors:
OH IK HYUN (KR)
PARK HYUN KUK (KR)
LEE SEUNG MIN (KR)
YANG JUN MO (KR)
PARK HYUN KUK (KR)
LEE SEUNG MIN (KR)
YANG JUN MO (KR)
Application Number:
PCT/KR2012/001653
Publication Date:
September 13, 2012
Filing Date:
March 07, 2012
Export Citation:
Assignee:
KOREA IND TECH INST (KR)
OH IK HYUN (KR)
PARK HYUN KUK (KR)
LEE SEUNG MIN (KR)
YANG JUN MO (KR)
OH IK HYUN (KR)
PARK HYUN KUK (KR)
LEE SEUNG MIN (KR)
YANG JUN MO (KR)
International Classes:
C23C14/34; B22F3/10; C23C14/14; H01L31/042
Foreign References:
| KR20090041148A | 2009-04-28 | |||
| US20080193798A1 | 2008-08-14 | |||
| KR20070057225A | 2007-06-04 | |||
| KR20050081149A | 2005-08-18 |
Attorney, Agent or Firm:
LEE, Jea Ryang (KR)
이재량 (KR)
이재량 (KR)
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Claims: