Title:
METHOD FOR MANUFACTURING A HIGH‑CONCENTRATION N-TYPE NITRIDE SEMICONDUCTOR AND NITRIDE LIGHT‑EMITTING DEVICE BASED ON SAME
Document Type and Number:
WIPO Patent Application WO/2010/018933
Kind Code:
A2
Abstract:
The method for manufacturing an n-type nitride semiconductor according to the prevent invention enables doping of Mg together with Si or Ge in growing an n-type Al(x)In(y)Ga(z)N nitride semiconductor layer (where 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ z ≤ 1, x ＋ y ＋ z = 1). In addition, the nitride light‑emitting device of the present invention may include a thin film layer comprising the n-type nitride semiconductor prepared by the method described above.
Inventors:
YOO TAE KYONG
Application Number:
PCT/KR2009/004035
Publication Date:
February 18, 2010
Filing Date:
July 21, 2009
Export Citation:
Assignee:
SEMICON LIGHT CO LTD (KR)
YOO TAE KYONG
YOO TAE KYONG
International Classes:
H01L21/18
Foreign References:
| JPH08139361A | 1996-05-31 | |||
| JPH06152072A | 1994-05-31 | |||
| JPH06260680A | 1994-09-16 |
Attorney, Agent or Firm:
LEE, Hoon et al. (KR)
이훈 (KR)
이훈 (KR)
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