Title:
METHOD FOR MANUFACTURING N-TYPE ORGANIC SEMICONDUCTOR THIN FILM
Document Type and Number:
WIPO Patent Application WO/2014/203887
Kind Code:
A1
Abstract:
In the present invention, by applying a solution containing the fullerene represented by formula (1) to a substrate and firing at 450°C or higher, an n-type organic semiconductor thin film that has favorable ionization potential and has microscopic irregularities and pores in the film surface can be obtained. (In the formula, R1-R5 each independently represent a hydrogen atom, a saccharide group, or a substituted saccharide group that is a saccharide group in which any given hydroxyl group of the saccharide group has been substituted with a substituent group, and R6 represents an alkyl group with a carbon number in the range 1-5. However, at least one of R1-R5 is the saccharide group or substituted saccharide group.)
Inventors:
OOTANI NAOKI (JP)
Application Number:
PCT/JP2014/066006
Publication Date:
December 24, 2014
Filing Date:
June 17, 2014
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD (JP)
International Classes:
H01L21/368; B05D7/24; B32B9/00; C07H15/203; H01L51/46
Domestic Patent References:
| WO2009084078A1 | 2009-07-09 | |||
| WO2010055898A1 | 2010-05-20 |
Foreign References:
| JP2011258944A | 2011-12-22 | |||
| JP2008034764A | 2008-02-14 | |||
| JP2013216638A | 2013-10-24 |
Attorney, Agent or Firm:
KOJIMA Takashi et al. (JP)
Takashi Kojima (JP)
Takashi Kojima (JP)
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