Title:
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/137667
Kind Code:
A1
Abstract:
This method for manufacturing a nitride semiconductor device comprises: a step in which H2 is used as a carrier gas and TMG and NH3 are raw materials, and in which a vertical MOCVD oven set to a first temperature is used to grow a GaN channel layer on an SiC substrate; a step in which the MOCVD oven is set to a second temperature that is higher than the first temperature, H2 is used as a carrier gas, and the SiC substrate on which the GaN channel layer was grown is held inside the MOCVD oven to which NH3 is supplied; and a step in which N2 is used as a carrier gas, TMI, TMA, and NH3 are raw materials, and the MOCVD oven, which is set to a third temperature that is lower than the first temperature, is used to grow an InAlN layer on the GaN channel layer.
Inventors:
MAKABE ISAO (JP)
NAKATA KEN (JP)
NAKATA KEN (JP)
Application Number:
PCT/JP2019/049246
Publication Date:
July 02, 2020
Filing Date:
December 16, 2019
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/205; C23C16/34; H01L21/338; H01L29/778; H01L29/812
Foreign References:
| JP2018093076A | 2018-06-14 | |||
| JP2015192026A | 2015-11-02 | |||
| JP2018098356A | 2018-06-21 | |||
| JP2014239159A | 2014-12-18 | |||
| JP2014123767A | 2014-07-03 | |||
| JP2013207019A | 2013-10-07 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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