Title:
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/101856
Kind Code:
A1
Abstract:
A method for manufacturing a heterojunction field effect transistor (1) comprising: a step for epitaxially growing a drift layer (20a) on a support substrate (10); a step for epitaxially growing a current-blocking layer (20b), which is a p-type semiconductor layer, on the drift layer (20a) at 1000°C or higher using hydrogen gas as a carrier gas; and a step for epitaxially growing a contact layer (20c) on the current-blocking layer (20b) using, as a carrier gas, at least one gas selected from the group consisting of nitrogen gas, argon gas, helium gas, and neon gas. This makes it possible to reduce drain leakage electric current and minimize any decrease in pinch-off characteristics because the acceptor concentration of the current-blocking layer (20b) is kept from becoming insufficient.
Inventors:
SAITOH Yu (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
斎藤 雄 (〒16 兵庫県伊丹市昆陽北一丁目１番１号 住友電気工業株式会社伊丹製作所内 Hyogo, 〒6640016, JP)
OKADA Masaya (1-3, Shimaya 1-chome, Konohana-ku, Osaka-sh, Osaka 24, 〒5540024, JP)
岡田 政也 (〒24 大阪府大阪市此花区島屋一丁目１番３号 住友電気工業株式会社大阪製作所内 Osaka, 〒5540024, JP)
斎藤 雄 (〒16 兵庫県伊丹市昆陽北一丁目１番１号 住友電気工業株式会社伊丹製作所内 Hyogo, 〒6640016, JP)
OKADA Masaya (1-3, Shimaya 1-chome, Konohana-ku, Osaka-sh, Osaka 24, 〒5540024, JP)
岡田 政也 (〒24 大阪府大阪市此花区島屋一丁目１番３号 住友電気工業株式会社大阪製作所内 Osaka, 〒5540024, JP)
Application Number:
JP2011/069085
Publication Date:
August 02, 2012
Filing Date:
August 24, 2011
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33, Kitahama 4-chome Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
住友電気工業株式会社 (〒41 大阪府大阪市中央区北浜四丁目５番３３号 Osaka, 〒5410041, JP)
SAITOH Yu (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
斎藤 雄 (〒16 兵庫県伊丹市昆陽北一丁目１番１号 住友電気工業株式会社伊丹製作所内 Hyogo, 〒6640016, JP)
OKADA Masaya (1-3, Shimaya 1-chome, Konohana-ku, Osaka-sh, Osaka 24, 〒5540024, JP)
住友電気工業株式会社 (〒41 大阪府大阪市中央区北浜四丁目５番３３号 Osaka, 〒5410041, JP)
SAITOH Yu (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
斎藤 雄 (〒16 兵庫県伊丹市昆陽北一丁目１番１号 住友電気工業株式会社伊丹製作所内 Hyogo, 〒6640016, JP)
OKADA Masaya (1-3, Shimaya 1-chome, Konohana-ku, Osaka-sh, Osaka 24, 〒5540024, JP)
International Classes:
H01L29/80; H01L21/20; H01L21/205; H01L21/331; H01L21/336; H01L21/338; H01L29/12; H01L29/737; H01L29/778; H01L29/78; H01L29/812
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl. 1-1, Marunouchi 2-chome, Chiyoda-k, Tokyo 05, 〒1000005, JP)
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