Title:
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATED BODY, AND NITRIDE SEMICONDUCTOR LAMINATED BODY
Document Type and Number:
WIPO Patent Application WO/2016/143229
Kind Code:
A1
Abstract:
The present invention has: a first step for forming an AlN layer on a substrate; a second step for forming a first GaN layer on the AlN layer; a third step for forming an Al-containing III nitride semiconductor layer on the first GaN layer; a fourth step for forming a second GaN layer on the III nitride semiconductor layer; a fifth step for forming a metal film on the second GaN layer; and a sixth step for performing treatment for modifying the second GaN layer and the metal film to be porous. Each of the first to fourth steps is performed by means of an HVPE method.
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Inventors:
FUJIKURA HAJIME (JP)
KONNO TAICHIRO (JP)
KONNO TAICHIRO (JP)
Application Number:
PCT/JP2015/085824
Publication Date:
September 15, 2016
Filing Date:
December 22, 2015
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
International Classes:
H01L21/205; C30B29/38
Foreign References:
| JP2003536257A | 2003-12-02 | |||
| JP2004319711A | 2004-11-11 | |||
| JP2014527707A | 2014-10-16 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
Masahiro Fukuoka (JP)
Masahiro Fukuoka (JP)
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