Title:
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE INCLUDING SEMI-INSULATING NITRIDE SEMICONDUCTOR LAYER, AND NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURED THEREBY
Document Type and Number:
WIPO Patent Application WO/2017/179868
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing a nitride semiconductor substrate including a semi-insulating nitride semiconductor layer, and a nitride semiconductor substrate manufactured thereby, and presents a manufacturing method for a nitride semiconductor substrate and a nitride semiconductor substrate manufactured thereby, the method forming an adjustment layer, which includes an acceptor-providing material, performing a heat treatment step, and then growing a nitride layer so as to diffuse, through an inter-diffusion effect, the acceptor-providing material within a nitride layer having a high donor doping concentration, thereby forming a semi-insulating nitride semiconductor layer of which a resistance characteristic is adjusted.
Inventors:
LEE HYUN-JAE (KR)
Application Number:
PCT/KR2017/003867
Publication Date:
October 19, 2017
Filing Date:
April 10, 2017
Export Citation:
Assignee:
LUMISTAL CO LTD (KR)
International Classes:
H01L21/02; H01L21/322; H01L21/324
Foreign References:
| JP2012243934A | 2012-12-10 | |||
| JP2000357843A | 2000-12-26 | |||
| KR20070055048A | 2007-05-30 | |||
| JPH05190898A | 1993-07-30 | |||
| JPH1041549A | 1998-02-13 |
Attorney, Agent or Firm:
YANG, Jeong-Kun (KR)
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