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Title:
METHOD FOR MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2010/024285
Kind Code:
A1
Abstract:
A method for manufacturing a nitride substrate (10) is provided with the following steps.  First, a nitride crystal is grown.  Then, the nitride substrate (10) including a front surface (11) is cut from the nitride crystal.  In the cutting step, the nitride substrate (10) is cut such that the off-angle formed by the axis orthogonally intersecting with the front surface (11) and the m-axis or the a-axis is greater than zero.  When the nitride crystal is grown in the c-axis direction, in the cutting step, the nitride substrate (10) is cut from the nitride crystal along a plane which passes through the front surface and the rear surface of the nitride crystal, but which does not pass through the line segment formed by connecting the center of the radius of curvature of the front surface and that of the rear surface of the nitride crystal.

Inventors:
ARAKAWA, Satoshi (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
荒川 聡 (〒16 兵庫県伊丹市昆陽北一丁目1番1号 住友電気工業株式会社 伊丹製作所内 Hyogo, 〒6640016, JP)
MIYANAGA, Michimasa (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
宮永 倫正 (〒16 兵庫県伊丹市昆陽北一丁目1番1号 住友電気工業株式会社 伊丹製作所内 Hyogo, 〒6640016, JP)
SAKURADA, Takashi (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
Application Number:
JP2009/064852
Publication Date:
March 04, 2010
Filing Date:
August 26, 2009
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33, Kitahama 4-chome Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
住友電気工業株式会社 (〒41 大阪府大阪市中央区北浜四丁目5番33号 Osaka, 〒5410041, JP)
ARAKAWA, Satoshi (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
荒川 聡 (〒16 兵庫県伊丹市昆陽北一丁目1番1号 住友電気工業株式会社 伊丹製作所内 Hyogo, 〒6640016, JP)
MIYANAGA, Michimasa (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
宮永 倫正 (〒16 兵庫県伊丹市昆陽北一丁目1番1号 住友電気工業株式会社 伊丹製作所内 Hyogo, 〒6640016, JP)
International Classes:
C30B29/38; B24B1/00; C30B33/00; H01L21/304
Attorney, Agent or Firm:
FUKAMI, Hisao et al. (Fukami Patent Office, Nakanoshima Central Tower 22nd Floor, 2-7, Nakanoshima 2-chome, Kita-ku, Osaka-sh, Osaka 05, 〒5300005, JP)
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