Title:
METHOD FOR MANUFACTURING NON-PUNCH THROUGH REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2014/206175
Kind Code:
A1
Abstract:
A method for manufacturing a non-punch through reverse conducting insulated gate bipolar transistor, comprising the following steps: providing an N-type substrate (100); forming a P+ transmitting region (102) on the N-type substrate (100) by adopting the manner of digging a groove and filling same; epitaxially preparing an N-type drift region (300) on one surface of the N-type substrate (100) which is provided with the P+ transmitting region (102); preparing a front surface structure of an insulated gate bipolar transistor on the N-type drift region (300); thinning the N-type substrate (100) to expose the P+ transmitting region (102) from the back surface thereof; and forming a metal electrode on the back surface of the N-type substrate (100). The above-mentioned method adopts the combination of the manner of digging a groove and filling same with an epitaxial manner to prepare a non-punch through reverse conducting insulated gate bipolar transistor, so as to be compatible with the conventional silicon wafer technology, and therefore, there is no need for higher requirements of the slice circulation technology, and there is also no need for a dedicated double-sided exposure machine.
Inventors:
HUANG XUAN (CN)
DENG XIAOSHE (CN)
WANG GENYI (CN)
WANG WANLI (CN)
DENG XIAOSHE (CN)
WANG GENYI (CN)
WANG WANLI (CN)
Application Number:
PCT/CN2014/078797
Publication Date:
December 31, 2014
Filing Date:
May 29, 2014
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
International Classes:
H01L21/331
Foreign References:
| CN101640186A | 2010-02-03 | |||
| CN103035488A | 2013-04-10 | |||
| CN102903633A | 2013-01-30 | |||
| US20070080407A1 | 2007-04-12 | |||
| CN103268860A | 2013-08-28 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
广州华进联合专利商标代理有限公司 (CN)
广州华进联合专利商标代理有限公司 (CN)
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