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Title:
METHOD FOR MANUFACTURING NON-VOLATILE SEMICONDUCTOR STORAGE ELEMENT AND METHOD FOR MANUFACTURING NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/089682
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a non-volatile semiconductor storage element which has a variable resistance element (17) and a non-ohmic element (20). The variable resistance element (17) is constructed from a first electrode (15a), a variable resistance layer (18), and a common electrode (19). The non-ohmic element (20) is constructed from a common electrode (19), a semiconductor layer or an insulator layer (21), and a second electrode (22). The method for manufacturing a non-volatile semiconductor storage element includes: a step for forming the first electrode (15a) on a substrate; a step for forming the variable resistance layer (18) on the first electrode (15a); a step for forming the common electrode (19) by nitriding the surface of the variable resistance layer (18); a step for forming the semiconductor layer or the insulator layer (21) on the common electrode (19); and a step for forming the second electrode (22). In the step for forming the common electrode (19), the common electrode (19) is made from a transition metal nitride by nitriding the surface of a transition metal oxide by means of plasma nitriding processing.

Inventors:
FUJII SATORU
MIKAWA TAKUMI
Application Number:
PCT/JP2010/007595
Publication Date:
July 28, 2011
Filing Date:
December 28, 2010
Export Citation:
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Assignee:
PANASONIC CORP (JP)
FUJII SATORU
MIKAWA TAKUMI
International Classes:
H01L45/00; H01L27/105
Domestic Patent References:
WO2008062688A12008-05-29
WO2008149484A12008-12-11
WO2009050861A12009-04-23
Foreign References:
JPH06204404A1994-07-22
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house Extensive 守 (JP)
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Claims: