Title:
METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/105060
Kind Code:
A1
Abstract:
Disclosed is a manufacturing method, whereby a nonvolatile memory device having a stable memory performance can be manufactured with a simple process. The method includes: a step wherein a laminated structure is formed by alternately laminating, on a substrate (11), a plurality of conductive layers (13) containing a transition metal, and a plurality of interlayer insulating films (17) composed of an insulating material; a step wherein a contact hole, which penetrates the laminated structure and exposes parts of the respective conductive layers (13) is formed; a step wherein the conductive layer (13) parts exposed in the contact hole are oxidized, and variable-resistance layers (14) wherein resistance values reversibly change on the basis of electrical signals transmitted thereto are formed; and a step wherein a conductive material is embedded in the contact hole, and a columnar electrode (12) connected to the variable-resistance layers (14) is formed in the contact hole.
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Inventors:
WEI, Zhiqiang (())
魏 志強 (())
TAKAGI, Takeshi (())
魏 志強 (())
TAKAGI, Takeshi (())
Application Number:
JP2011/001001
Publication Date:
September 01, 2011
Filing Date:
February 23, 2011
Export Citation:
Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
WEI, Zhiqiang (())
魏 志強 (())
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
WEI, Zhiqiang (())
魏 志強 (())
International Classes:
H01L27/105; G11C13/00; H01L45/00
Attorney, Agent or Firm:
NII, Hiromori (6F Tanaka Ito Pia Shin-Osaka Bldg.,3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-cit, Osaka 11, 〒5320011, JP)
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Claims: