Title:
METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/105060
Kind Code:
A1
Abstract:
Disclosed is a manufacturing method, whereby a nonvolatile memory device having a stable memory performance can be manufactured with a simple process. The method includes: a step wherein a laminated structure is formed by alternately laminating, on a substrate (11), a plurality of conductive layers (13) containing a transition metal, and a plurality of interlayer insulating films (17) composed of an insulating material; a step wherein a contact hole, which penetrates the laminated structure and exposes parts of the respective conductive layers (13) is formed; a step wherein the conductive layer (13) parts exposed in the contact hole are oxidized, and variable-resistance layers (14) wherein resistance values reversibly change on the basis of electrical signals transmitted thereto are formed; and a step wherein a conductive material is embedded in the contact hole, and a columnar electrode (12) connected to the variable-resistance layers (14) is formed in the contact hole.
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Inventors:
WEI ZHIQIANG
TAKAGI TAKESHI
IIJIMA MITSUTERU
TAKAGI TAKESHI
IIJIMA MITSUTERU
Application Number:
PCT/JP2011/001001
Publication Date:
September 01, 2011
Filing Date:
February 23, 2011
Export Citation:
Assignee:
PANASONIC CORP (JP)
WEI ZHIQIANG
TAKAGI TAKESHI
IIJIMA MITSUTERU
WEI ZHIQIANG
TAKAGI TAKESHI
IIJIMA MITSUTERU
International Classes:
H01L27/105; G11C13/00; H01L45/00
Foreign References:
| JP2010010688A | 2010-01-14 | |||
| JP2009224778A | 2009-10-01 | |||
| JP2008277543A | 2008-11-13 | |||
| JP2010027753A | 2010-02-04 |
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house Extensive 守 (JP)
New house Extensive 守 (JP)
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Claims: