Title:
METHOD FOR MANUFACTURING P-TYPE GROUP III NITRIDE SEMICONDUCTOR, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO2005043582
Kind Code:
A3
Abstract:
An object of the present invention is to provide an efficient method for manufacturing a p-type group III nitride semiconductor that has adequate carrier concentration and a surface with a low occurrence of crystal damage. The inventive method for manufacturing a p-type group III nitride semiconductor comprises: (a) growing a group III nitride semiconductor containing a p-type dopant at 1000(C or higher in an atmosphere containing H2 gas and/or NH3 gas; and (b) after the growth of the group III nitride semiconductor, substituting the H2 gas and NH3 gas with an inert gas at a temperature higher than 800(C while reducing the temperature.
Inventors:
KOBAYAKAWA MASATO (JP)
Application Number:
PCT/JP2004/016699
Publication Date:
December 15, 2005
Filing Date:
November 04, 2004
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
KOBAYAKAWA MASATO (JP)
KOBAYAKAWA MASATO (JP)
International Classes:
H01L21/205; H01L33/00; C01G15/00; H01L33/06; H01L33/32; H01L33/42; H01S5/323; H01L21/20; (IPC1-7): H01L21/205; H01L33/00; H01S5/323
Foreign References:
| JP2003273473A | 2003-09-26 | |||
| JPH05183189A | 1993-07-23 | |||
| JP2004327655A | 2004-11-18 |
Other References:
See also references of EP 1680809A4
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