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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING PHASE CHANGE MEMORY BY USING LASER
Document Type and Number:
WIPO Patent Application WO/2018/004147
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing a phase change memory including an electrode unit, which causes a phase change in a phase change material and is disposed at the lower side of the phase change material, and the phase change material, which has a resistance that changes while the phase change material is being phase-changed by the electrode unit, the method comprising a deposition step, a first emission step, and a second emission step. In the deposition step, the electrode unit is disposed at the lower side of a trench formed in a substrate and the phase change material is deposited on the substrate. In the first emission step a first laser beam having a first energy intensity higher than that of a melting point of the phase change material is emitted at the phase change material. In the second emission step, a second laser beam having a second energy intensity lower than the first energy intensity and lower than that of the melting point of the phase change material is emitted at the phase change material. The second laser beam emitted in the second emission step is emitted at a set time later than that of the first laser beam emitted in the first emission step, the phase change material is melted by the first emission step and introduced into the trench, and the temperature enabling the phase change material to flow into the trench is maintained by the second emission step.

Inventors:
PARK HONG JIN (KR)
CHOI KI CHUL (KR)
KIM MIN HO (KR)
Application Number:
PCT/KR2017/005992
Publication Date:
January 04, 2018
Filing Date:
June 09, 2017
Export Citation:
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Assignee:
BSP INC (KR)
International Classes:
H01L45/00
Foreign References:
KR20150127367A2015-11-17
KR20080040824A2008-05-09
US20110168966A12011-07-14
KR20130007759A2013-01-21
KR20100063937A2010-06-14
Attorney, Agent or Firm:
KIM, Taewan (KR)
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