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Title:
METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/043615
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a piezoelectric device with which deterioration of the piezoelectricity of a piezoelectric thin film and damage to the piezoelectric thin film due to ion injection can be prevented. A compressive strain film (90) is formed on the back face (13) opposing the ion injection-side face (12) of a piezoelectric monocrystalline substrate (1). The compressive strain film (90) compresses the ion injection-side face (12) of the piezoelectric monocrystalline substrate (1). When the compressive strain film (90) is formed on the back face (13), the compressive strain film (90) applies compressive strain to the portion of the piezoelectric monocrystalline substrate (1) that is on the ion injection side of the center line (C) in the thickness direction of the piezoelectric monocrystalline substrate (1). Thus, warping of the piezoelectric monocrystalline substrate (1) is alleviated and the substrate flattens. A support substrate (50) is then bonded to the surface of a bonding film (22) on the flat piezoelectric monocrystalline substrate (1). Next, the bonded body of the piezoelectric monocrystalline substrate (1) and the support substrate (50) is heated and a separation occurs with the ion injection portion (100) as the separation face.

Inventors:
IWAMOTO TAKASHI (JP)
Application Number:
PCT/JP2011/072160
Publication Date:
April 05, 2012
Filing Date:
September 28, 2011
Export Citation:
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Assignee:
MURATA MANUFACTURING CO (JP)
IWAMOTO TAKASHI (JP)
International Classes:
H03H9/25; H01L41/08; H01L41/09; H01L41/113; H01L41/18; H01L41/312; H01L41/335; H03H3/02; H03H3/08; H03H9/17
Domestic Patent References:
WO2010082571A12010-07-22
WO2009093376A12009-07-30
Foreign References:
JP2002534886A2002-10-15
JP2003017967A2003-01-17
Attorney, Agent or Firm:
Kaede Patent Attorneys' Office (JP)
Patent business corporation Kaede Patent Attorneys' Office (JP)
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Claims: