Title:
METHOD FOR MANUFACTURING PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC THIN FILM ELEMENT, AND MEMBER FOR PIEZOELECTRIC THIN FILM ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/020638
Kind Code:
A1
Abstract:
The invention provides a method for manufacturing a piezoelectric thin film element having a piezoelectric thin film layer demonstrating excellent surface morphology and exceptional crystallinity. The method comprises the steps of: forming a lower electrode layer (2) on a substrate (1); forming a piezoelectric thin film buffer layer (3) on the lower electrode layer (2) at a relatively low deposition temperature; forming a piezoelectric thin film layer (4) on the piezoelectric thin film buffer layer (3) at a deposition temperature higher than the deposition temperature of the piezoelectric thin film buffer layer (3); and forming an upper electrode layer on the piezoelectric thin film layer (4).
Inventors:
IKEUCHI SHINSUKE (JP)
YAMAMOTO KANSHO (JP)
YAMAMOTO KANSHO (JP)
Application Number:
PCT/JP2011/066896
Publication Date:
February 16, 2012
Filing Date:
July 26, 2011
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
IKEUCHI SHINSUKE (JP)
YAMAMOTO KANSHO (JP)
IKEUCHI SHINSUKE (JP)
YAMAMOTO KANSHO (JP)
International Classes:
C01G33/00; C01G45/02; C04B35/00; C23C14/06; H01L41/08; H01L41/09; H01L41/18; H01L41/316; H01L41/319
Foreign References:
| JP2005277408A | 2005-10-06 | |||
| JP2009117785A | 2009-05-28 | |||
| JP2008160092A | 2008-07-10 |
Attorney, Agent or Firm:
MIYAZAKI & METSUGI (JP)
Patent business corporation Miyazaki and table-of-contents patent firm (JP)
Patent business corporation Miyazaki and table-of-contents patent firm (JP)
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Claims: