Title:
METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON FRAGMENT AND METHOD FOR MANAGING SURFACE METAL CONCENTRATION OF POLYCRYSTALLINE SILICON FRAGMENT
Document Type and Number:
WIPO Patent Application WO/2018/198947
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing polycrystalline silicon fragments that includes: a step of manufacturing a polycrystalline silicon rod by the Siemens method; a step of fracturing the polycrystalline silicon rod to obtain polycrystalline silicon fragments; and a step of etching and cleaning the polycrystalline silicon fragments in a cleaning tank. In the cleaning step, small pieces of the polycrystalline silicon having controlled shapes and sizes are caused to be present in the cleaning tank and the weight change of the small pieces of the polycrystalline silicon before and after the etching process is measured to thereby manage the cleaning step. The present invention also relates to a method for managing the surface metal concentration of the polycrystalline silicon fragments.
Inventors:
NISHIMURA SHIGEKI (JP)
Application Number:
PCT/JP2018/016217
Publication Date:
November 01, 2018
Filing Date:
April 19, 2018
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B33/035; B02C1/02; B02C13/00; C30B29/06
Domestic Patent References:
| WO2006126365A1 | 2006-11-30 |
Foreign References:
| JPH0867511A | 1996-03-12 | |||
| JP2014233653A | 2014-12-15 | |||
| JP4554435B2 | 2010-09-29 |
Other References:
See also references of EP 3617144A4
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
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