Title:
METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON FOR SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2009/036686
Kind Code:
A1
Abstract:
A method of manufacturing polycrystalline silicon for solar cell by means of
combining silicon monoxide dismutation reaction, sour-dipping separation
and vacuum smelting, comprising the following six steps of (1) using chemical
purity industrial silicon and high-purity silica to produce silicon monoxide;
(2) producing high-purity silicon by means of silicon monoxide dismutation;
(3) removing the impurities of B and P in silicon by dipping into strong nitric
acid; (4) smelting by vacuum electron beam furnace to further purify high-purity
silicon, and then cut away the part of cast ingot rich in impurity; (5) smelting
in plasma furnace by introduction of nitrogen gas or nitrogen gas combined with
hydrogen gas to further remove remaining B, P and other impurities, and then oriented
solidifying; (6)lathing the outer skin of cast ingot and the part rich in impurity
thereon to finally obtain high-purity silicon used for solar cell with purity
up to more than 6N.The method may abandon the technical solution of Siemens method,
avoid environmental pollution and enhance the safety degree of production and
as well be beneficial to put into practice broadly in our country.
Inventors:
LI SHAOGUANG (CN)
Application Number:
PCT/CN2008/072312
Publication Date:
March 26, 2009
Filing Date:
September 10, 2008
Export Citation:
Assignee:
LI SHAOGUANG (CN)
International Classes:
C30B28/06; C01B33/037; C01B33/039
Foreign References:
| CN101122047A | 2008-02-13 | |||
| CN1284046A | 2001-02-14 | |||
| JP2000327488A | 2000-11-28 | |||
| CN1803598A | 2006-07-19 | |||
| JPH0717704A | 1995-01-20 | |||
| CN101007633A | 2007-08-01 | |||
| JPH11209195A | 1999-08-03 |
Attorney, Agent or Firm:
SHENYANG KEWEI INT'L PATENT OFFICE (1# No.76A, Xiaoxi Road, Shenhe Distric, Shenyang Liaoning 3, CN)
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