Title:
METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM
Document Type and Number:
WIPO Patent Application WO/2010/134691
Kind Code:
A2
Abstract:
The method for manufacturing a polycrystalline silicon thin film according to the present invention comprises: a metallic layer formation step for forming a metallic layer on an insulation substrate; a first silicon layer formation step for laminating a silicon layer on the metallic layer formed during said metallic layer formation step; a first heat treatment step for performing heat treatment for allowing metal catalyst atoms to be transferred from said metallic layer to said silicon layer to form a silicide layer; a second silicon layer formation step for laminating an amorphous silicon layer on said silicide layer; and a crystallization step for performing heat treatment to form crystalline silicon on said amorphous silicon layer by using particles of said silicide layer as a mediator.
Inventors:
LEE WON TAE (KR)
CHO HAN SICK (KR)
KIM HYUNG SU (KR)
CHO HAN SICK (KR)
KIM HYUNG SU (KR)
Application Number:
PCT/KR2010/001761
Publication Date:
November 25, 2010
Filing Date:
March 23, 2010
Export Citation:
Assignee:
NOKORD CO LTD (KR)
LEE WON TAE (KR)
CHO HAN SICK (KR)
KIM HYUNG SU (KR)
LEE WON TAE (KR)
CHO HAN SICK (KR)
KIM HYUNG SU (KR)
International Classes:
H01L21/20
Foreign References:
| KR20040061795A | 2004-07-07 | |||
| KR100220207B1 | 1999-09-01 | |||
| JP2006216658A | 2006-08-17 | |||
| JP2003068642A | 2003-03-07 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
리앤목특허법인 (KR)
리앤목특허법인 (KR)
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Claims: