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Patent Searching and Data


Title:
METHOD OF MANUFACTURING RESISTANCE-CHANGE TYPE NON-VOLATILE STORAGE DEVICE AND RESISTANCE-CHANGE TYPE NON-VOLATILE STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/108593
Kind Code:
A1
Abstract:
The method includes: a step of forming an MSM diode element (10a) on a substrate (100); a step of forming a resistance-change element (10b) on the MSM diode element (10a); a step of covering the sidewall of the semiconductor layer (105) of the MSM diode element (10a) and forming a first oxygen barrier layer (109a) that does not cover at least part of the sidewall of a resistance-change layer (107) of the resistance-change element (10b); and a step of oxidising the sidewall of the resistance-change layer (107) that was exposed, not being covered by the first oxygen barrier layer (109a).

Inventors:
MIKAWA TAKUMI
HIMENO ATSUSHI
MURASE HIDEAKI
Application Number:
PCT/JP2013/000048
Publication Date:
July 25, 2013
Filing Date:
January 10, 2013
Export Citation:
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Assignee:
PANASONIC CORP (JP)
International Classes:
H01L27/105; H01L45/00; H01L49/00
Foreign References:
JP2011129705A2011-06-30
JP2003023174A2003-01-24
JPH07122517A1995-05-12
JP2010287683A2010-12-24
JP2007311772A2007-11-29
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house Extensive 守 (JP)
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Claims: