Title:
METHOD FOR MANUFACTURING RESISTIVE MEMORY AND RESISTIVE MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/191907
Kind Code:
A1
Abstract:
A method for manufacturing a resistive memory and a resistive memory. Said method comprises: providing deep trenches filled with polysilicon on a silicon on insulator SOI wafer to obtain an SOI wafer having the deep trenches, the deep trenches penetrating through a silicon device layer (30) and a buried oxide layer (31) of the SOI wafer and reaching a support layer (32); fabricating a complementary metal oxide semiconductor CMOS circuit on the SOI wafer having the deep trenches to obtain an SOI wafer comprising the CMOS circuit; thinning the support layer of the SOI wafer comprising the CMOS circuit to the surface of the buried oxide layer, and forming grooves at the top of the deep trenches filled with polysilicon; and fabricating memristors on the buried oxide layer of the SOI wafer. Thus, the separation of the RRAM standard CMOS circuit fabrication process and the memristor fabrication process is realized, so that noble metals are introduced as the electrode of the memristors in the large-scale production process of the RRAM, thereby improving the electrical storage characteristics of the memristors in the RRAM.
Inventors:
YAO GUOFENG (CN)
SHEN JIAN (CN)
SHEN JIAN (CN)
Application Number:
PCT/CN2018/081766
Publication Date:
October 10, 2019
Filing Date:
April 03, 2018
Export Citation:
Assignee:
SHENZHEN GOODIX TECH CO LTD (CN)
International Classes:
H01L23/60
Foreign References:
| CN104795384A | 2015-07-22 | |||
| CN102299135A | 2011-12-28 | |||
| US6245672B1 | 2001-06-12 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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