Title:
METHOD FOR MANUFACTURING RESONANT DEVICE
Document Type and Number:
WIPO Patent Application WO/2004/019426
Kind Code:
A1
Abstract:
A piezoelectric layer and an electrode layer are formed on a silicon substrate, and a piezoelectric body and an electrode are patterned by photolithography. The silicon substrate is etched to form a structure. A protective film is formed on at least one face of the structure. Other faces, on which no protective film is formed, is etched to obtain a resonant device. The structure is highly precisely etched in the thickness direction while measuring the resonance frequency. Consequently, the resonance frequency and detuning frequency of the resonant device can be adjusted to certain values.
Inventors:
NAKATANI MASAYA (JP)
TAJIKA HIROFUMI (JP)
TAJIKA HIROFUMI (JP)
Application Number:
PCT/JP2003/010492
Publication Date:
March 04, 2004
Filing Date:
August 20, 2003
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
NAKATANI MASAYA (JP)
TAJIKA HIROFUMI (JP)
NAKATANI MASAYA (JP)
TAJIKA HIROFUMI (JP)
International Classes:
G01C19/56; G01C19/5628; H01L41/08; H01L41/22; H01L41/23; H01L41/332; H03H3/02; H03H9/21; (IPC1-7): H01L41/22; G01C19/56; G01P9/04; H01L41/08
Foreign References:
| JPH06174739A | 1994-06-24 | |||
| JPH11111677A | 1999-04-23 | |||
| JPH02187025A | 1990-07-23 | |||
| EP1302744A2 | 2003-04-16 |
Attorney, Agent or Firm:
Iwahashi, Fumio c/o Matsushita Electric Industrial Co. Ltd. (1006, Oaza Kadom, Kadoma-shi Osaka, JP)
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