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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/040237
Kind Code:
A1
Abstract:
The present disclosure provides a method for fabricating a self-supporting gallium nitride substrate, comprising: 1) providing a composite substrate including a sapphire substrate and a gallium nitride film; 2) forming a temporary bonding layer on the gallium nitride film; 3) bonding a transfer substrate to the composite substrate by means of the temporary bonding layer; 4) stripping the sapphire substrate by means of a laser stripping process; 5) performing weak bonding on a receiving substrate and the gallium nitride film, and stripping the transfer substrate from the gallium nitride film by disabling the temporary bonding layer; and 6) epitaxially growing a gallium nitride epitaxial layer on the gallium nitride film, and disabling the weak bonding by means of the lattice mismatch stress and/or the thermal mismatch stress between the gallium nitride film and the gallium nitride epitaxial layer and the receiving substrate, so as to realize separation between the gallium nitride film and the receiving substrate. The present application can effectively overcome the defect that the thickness of a heterojunction gallium nitride epitaxial layer is limited due to lattice mismatch and thermal mismatch, improve the quality of the self-supporting gallium nitride substrate, and reduce the manufacturing cost of the self-supporting gallium nitride substrate.

Inventors:
REN JUNJIE (CN)
WANG SHUAI (CN)
Application Number:
PCT/CN2022/084250
Publication Date:
March 23, 2023
Filing Date:
March 31, 2022
Export Citation:
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Assignee:
SINO NITRIDE SEMICONDUCTOR CO (CN)
International Classes:
H01L21/02; C23C16/30; C30B25/18; C30B29/40; H01L21/683
Foreign References:
CN113903655A2022-01-07
CN103305909A2013-09-18
CN111769036A2020-10-13
CN112301422A2021-02-02
CN103114332A2013-05-22
KR20130078984A2013-07-10
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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