Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/170751
Kind Code:
A1
Abstract:
A first silicon nitride film (7) is formed so as to cover a metal wiring (5) formed on the main surface of a substrate (3). Then, part of the first silicon nitride film (7) positioned on the upper surface of the metal wiring (5) is exposed, and a mask material (25) for covering part of the first silicon nitride film (7) positioned in other regions is formed. Then, in a state where the mask material (25) is formed, modification treatment for repelling a solution (27), which is to be a SOG film, is performed on the surface of the exposed part of the first silicon nitride film (7). By applying and firing the solution (27), which is to be the SOG film, on the substrate (3) using a spin-on-glass method, a SOG film (11) is formed so as to cover a part other than the part of the first silicon nitride film (7) positioned on the upper surface of the metal wiring (5).
Inventors:
NAKAMURA YU (JP)
Application Number:
PCT/JP2022/009757
Publication Date:
September 14, 2023
Filing Date:
March 07, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/318; H01L21/316
Foreign References:
| JPS6376351A | 1988-04-06 | |||
| JP2005109452A | 2005-04-21 | |||
| US6166439A | 2000-12-26 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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