METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING GAS

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING GAS

Document Type and Number:

WIPO Patent Application WO/2020/054200

Kind Code:

A1

Abstract:

[Problem] To provide: a method for manufacturing a semiconductor device; and an etching gas, which are capable of suitably etching a film. [Solution] An embodiment of the present invention provides a method for manufacturing a semiconductor device, the method comprising etching a film by means of an etching gas containing a chain hydrocarbon compound represented by CxHyFz (C represents carbon, H represents hydrogen, F represents fluorine, x represents an integer of at least 3, and y and z each represent an integer of at least 1). Each terminal carbon atom in the carbon chain of CxHyFz is a chain hydrocarbon compound which binds to fluorine atoms but does not bind to hydrogen atoms.

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Inventors:

ISHINO TAKAYA (JP)
SASAKI TOSHIYUKI (JP)
SHIMODA MITSUHARU (JP)
SHIMIZU HISASHI (JP)

Application Number:

PCT/JP2019/027316

Publication Date:

March 19, 2020

Filing Date:

July 10, 2019

Export Citation:

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Assignee:

KIOXIA CORP (JP)
KANTO DENKA KOGYO KK (JP)

International Classes:

H01L21/3065; H01L21/3213; H01L21/336; H01L21/768; H01L27/11582; H01L29/788; H01L29/792

Domestic Patent References:

WO2013015033A1	2013-01-31
WO2014104290A1	2014-07-03

Foreign References:

JP2016139782A

2016-08-04

Other References: