Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/125606
Kind Code:
A1
Abstract:
[Problem] To provide a technique with which it is possible to form a uniform diffusion oxide film that is not dependent on an underlayer in a step for manufacturing a semiconductor device,. [Solution] A substrate processing device comprising: a substrate processing chamber having a plasma generation space and a substrate processing space; and a coil provided on the outer periphery of the plasma generation space, the electrical length of the coil being an integer multiple of the wavelength of the applied high-frequency power, wherein the invention has: a step for placing a substrate on a substrate placement platform, the substrate having a structure in which are exposed the surfaces of a plurality of silicon-containing films of mutually different type, and the surface of a silicon-containing film having a plurality of crystal orientation planes that are mutually different; a step for supplying a processing gas into the substrate processing chamber; a step for applying high-frequency power to the coil and starting generation of the plasma of the processing gas in the plasma generation space; and a step for reforming the substrate surface using the generated plasma.
Inventors:
NAKAYAMA MASANORI (JP)
Application Number:
PCT/JP2016/051818
Publication Date:
August 11, 2016
Filing Date:
January 22, 2016
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/316; H01L21/31; H01L21/336; H01L29/788; H01L29/792; H05H1/46
Foreign References:
JP2014075579A | 2014-04-24 | |||
JP2009252773A | 2009-10-29 |
Download PDF: