Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT APPARATUS, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2017/056243
Kind Code:
A1
Abstract:
To provide a technology whereby uniform substrate treatment can be performed. Provided is a technology having: a step for preparing, in a treatment chamber, a substrate wherein an insulating film as a base film is formed on a pattern having an aspect ratio equal to or higher than 20, and a film to be treated, said film having a thickness equal to or less than 200 Å, is formed on the insulating film; a step for increasing the temperature of the substrate to a first temperature by means of electromagnetic waves supplied from a heating apparatus; a first treatment step for treating the substrate for a first treatment time, while maintaining the first temperature; a step for increasing, after the first treatment step, the temperature of the substrate from the first temperature to a second temperature that is higher than the first temperature by means of electromagnetic waves supplied from the heating apparatus; and a second treatment step for treating the substrate for a second treatment time that is shorter than the first treatment time, while maintaining the second temperature.
Inventors:
YUASA KAZUHIRO (JP)
MICHITA NORIAKI (JP)
MICHITA NORIAKI (JP)
Application Number:
PCT/JP2015/077776
Publication Date:
April 06, 2017
Filing Date:
September 30, 2015
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/20; H01L21/268; H01L21/265; H01L21/31; H01L21/316
Foreign References:
| JP2012234864A | 2012-11-29 | |||
| JP2014187274A | 2014-10-02 | |||
| JP2012104703A | 2012-05-31 | |||
| JP2002289521A | 2002-10-04 | |||
| JP2014053380A | 2014-03-20 |
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