METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT APPARATUS, AND PROGRAM

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT APPARATUS, AND PROGRAM

Document Type and Number:

WIPO Patent Application WO/2018/055674

Kind Code:

A1

Abstract:

The present invention suppresses adverse effects to a base due to a reaction gas. This method for manufacturing a semiconductor device has: a step for forming an amorphous seed layer on a substrate by supplying the substrate with a gaseous starting material; a step for polycrystallizing the seed layer by heat-treating the seed layer; and a step for forming an oxide film on the polycrystallized seed layer, and oxidizing the polycrystallized seed layer by performing predetermined times a cycle, in which a step for supplying the substrate with the gaseous starting material, and a step for supplying the substrate with an oxygen-containing gas and a hydrogen-containing gas are performed non-simultaneously.

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Inventors:

HORITA HIDEKI (JP)
TERASAKI MASATO (JP)

Application Number:

PCT/JP2016/077698

Publication Date:

March 29, 2018

Filing Date:

September 20, 2016

Export Citation:

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Assignee:

HITACHI INT ELECTRIC INC (JP)

International Classes:

C23C16/455; H01L21/316; H01L21/31

Foreign References:

JP2014154652A	2014-08-25
JPH04357838A	1992-12-10

Attorney, Agent or Firm:

PATENT PROFESSIONAL CORPORATION IPWIN (JP)

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